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RF Power Amplifier Market was valued at US$ 5.96 billion in 2023 and is expected to reach US$ 15.09 billion by 2031; it is estimated to record a CAGR of 12.3% from 2023 to 2031

RF Power Amplifier Market

Miniaturization of RF Power Amplifiers to Create Growth Opportunities in RF Power Amplifier Market During Forecast Period

The demand for compact and energy-efficient devices in wireless technology applications; advancements in communication engineering such as 5G; and the need for high-quality transmission with enhanced parameters such as efficiency, linearity, and bandwidth have led to the adoption of miniaturized RF power amplifiers. The miniaturization of RF power amplifiers enables their integration into wireless transceivers. This integration is crucial for the development of smaller and more portable devices without affecting the overall performance. By integrating miniaturized RF power amplifiers into transceivers, multiple RF power amplifiers can be equipped with the wireless sensors of each cell, contributing to increased efficiency and performance of wireless communication systems. Miniaturized RF power amplifiers help reduce power consumption and enable the design of compact devices without compromising performance. By reducing the size and improving the design of RF power amplifiers, power consumption can be minimized while maintaining stable output and high efficiency. With the increasing adoption of IoT, wireless sensors, and connected devices, there is a growing requirement for RF power amplifiers that can operate efficiently as well as extend battery life. The miniaturization of RF power amplifiers finds applications in various industries, including telecommunications, broadcasting, aerospace, defense, and healthcare. Thus, the miniaturization of RF power amplifiers is anticipated to present new opportunities for the market players during the forecast period.

RF Power Amplifier Market: Industry Overview

The RF power amplifier market analysis is segmented on the basis of frequency, technology, and application. Based on frequency, the market is segmented into less than 10 GHz, 11–20 GHz, 21–30 GHz, and above 30 GHz. Based on technology, the market is segmented into gallium arsenide (GaAs), gallium nitride (GaN), silicon germanium (SiGe), and others. Based on application, the RF power amplifier market is segmented into consumer electronics, aerospace and defense, automotive, medical, and others. In terms of geography, the RF power amplifier market is segmented into North America, Europe, APAC, the MEA, and SAM. In terms of revenue, Asia Pacific dominated the RF power amplifier market share in 2022.

The RF power amplifier market size in North America is experiencing significant growth due to the increasing demand for amplified low-power RF signals across the military & defense industry. The US military researchers have recognized the importance of limiting waste heat generation in gallium nitride-based (GaN-based) power amplifiers. Excessive waste heat can limit the performance and lifetimes of military radar, electronic warfare (EW), communications, and other RF and microwave systems. To address this issue, the US Defense Advanced Research Projects Agency (DARPA) awarded Raytheon and Northrop Grumman with two prime US defense contractors, i.e., THREADS contracts worth US$ 14.9 million and US$ 14.2 million, respectively. Under the THREADS (i.e., Technologies for Heat Removal in Electronics at the Device Scale) contract, the companies will collaborate to limit waste heat generated in gallium nitride (GaN)-based power amplifiers. With this collaboration, they aim to reduce transistor thermal resistance while maintaining good channel current transport properties. Overcoming the thermal limitations would allow transistors to operate reliably at RF output power density that is close to their fundamental electronic limits. Thus, North America is estimated to hold a significant RF power amplifier market share during the forecast period.

RF Power Amplifier Market: Competitive Landscape and Key Developments

Qorvo Inc, NXP Semiconductors NV, Qualcomm Inc, Infineon Technologies AG, Broadcom Inc, Mitsubishi Electric Corp, STMicroelectronics NV, Skyworks Solutions Inc, Texas Instruments Inc, and Analog Devices Inc are among the key players profiled in the RF power amplifier market report. Several other essential market players were analyzed for a holistic view of the market and its ecosystem. The report provides detailed market insights, which help the key players strategize their market growth. The RF power amplifier market report provides detailed market insights, as per company press releases, which help the key players strategize their market growth.

  • In October 2021, Qualcomm Inc launched new RF filter technology for bands up to 7 GHz by enabling next generation 5G and Wi-Fi solutions. The company integrated ultraBAW technology to launch a power amplifier module to enable high-power handling with high-frequency support in extremely small acoustic structures.
  • In June 2023, NXP Semiconductors NV announced a family of top-side cooled RF amplifier modules to enable thinner and lighter radios for 5G infrastructure. The top-side cooled RF amplifier modules deliver significant design and manufacturing benefits to the user, including the removal of the dedicated RF shield, the use of a cost-effective and streamlined printed circuit board, and the separation of thermal management from RF design.

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